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| ESJA08 HIGH VOLTAGE DIODE ESJA08 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin. Lot No. (8kV/5mA) Outline Drawings Cathode Mark o 2.5 o 0.5 Features Ultra high speed switching Low VF High surge resisitivity for CRT discharge High reliability design Ultra small pakage 27 min. 6.5 27 min. Cathode Mark Type Mark Applications Rectification for CRT display monitor high voltage power supply (FBT:Flyback Transformer) ESJA08-08 Maximum Ratings and Characteristics Absolute Maximum Ratings Items Repetitive Peak Reverse Voltage Average Output Current Surge Current Junction Temperature Allowable Operation Case Temperature Storage Temperature Symbols VRRM IO IFSM Tj Tc Tstg Ta=25C,Resistive Load 10mS Sine-half wave peak value Condition ESJA08 8 5 0.5 120 100 -40 to +120 Units kV mA A C C C Electrical Characteristics (Ta=25C Unless otherwise specified ) Items Maximum Forward Voltage Drop Maximum Reverse Current Maximum Reverse Recovery Time Junction Capacitance Symbols VF IR trr Cj Conditions IF=10mA VR=VRRM Ta=25C,IF=2mA,IR=4mA Ta=25C,VR=0V,f=1MHz ESJA08 28 2 0.05 2 Units V A s pF ESJA08 Characteristics (8kV/5mA) 28 1 24 Tj=100 o C 0.1 IF 20 Tj=100 o C Tj= 25 o IR C [mA] 16 [ A] 0.01 12 Tj= 25 o C 1E-3 8 0 10 20 30 40 0 2 4 6 8 10 12 VF [V] VR [kV] Forward Characteristics Reverse Characteristics 1.0 o 100 Tj= 25 C A I R =100 N=100pcs. o 0.8 Tj=25 C f=1MHz 80 Cj [pF] 0.6 N 0.4 60 [pcs.] 40 0.2 20 0.0 0 50 100 150 200 0 V Bias [V] 0 4 8 12 16 20 24 28 Junction Capacitance Characteristics V AV [kV] Avalanche Breakdown Voltage 120 Tj= 25 C N=100pcs. o 0.01F D.U.T 100 1kohm 80 150 kohm 100ohm N [pcs.] 60 OSCILLO SCOPE 40 20 IF=2mA 0 1mA 0 0.00 0.02 0.04 trr ( s) 0.06 0.08 0.10 IR=4mA Reverse Recovery Time trr |
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